1 – 10 of 15
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2013
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2012
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
- 2011
-
Mark
High quality InAs and GaSb thin layers grown on Si (111)
(
- Contribution to journal › Article
-
Mark
Effects of crystal phase mixing on the electrical properties of InAs nanowires
(
- Contribution to journal › Article
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
- 2010
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding